A THEORETICAL-STUDY OF THE CHARGE COLLECTION CONTRAST OF LOCALIZED SEMICONDUCTOR DEFECTS WITH ARBITRARY RECOMBINATION ACTIVITY

被引:49
作者
DONOLATO, C
机构
[1] Consiglio Nazionale Delle Ricerche, Istituto di Chimica e Tecnologia Dei Mater. e Dei Componenti per l'Elettronica, Bologna
关键词
D O I
10.1088/0268-1242/7/1/007
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The charge collection contrast of a small spherical defect or a straight dislocation parallel to the surface of a semiconductor is calculated by a direct, though approximate, solution of the integral equation for the excess minority carrier density in the presence of each defect. The analysis is carried out for a semi-infinite semiconductor where the surface acts as a collector, and holds for arbitrary recombination activity of the defect. The new expressions for the effective strength are shown to extend earlier results obtained for the dislocation case with the iteration-perturbation method. The relation between measured defect strength and defect characteristics is illustrated and the range of validity of the first-order contrast analysis is discussed.
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页码:37 / 43
页数:7
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