GRAIN-SIZE DEPENDENCE OF MOBILITY IN POLYCRYSTALLINE N-INDIUM PHOSPHIDE

被引：16

作者：

ROY, JN

BASU, S

BOSE, DN

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：847 / 852

页数：6

共 10 条

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[9] ZERO-BIAS RESISTANCE OF GRAIN-BOUNDARIES IN NEUTRON-TRANSMUTATION-DOPED POLYCRYSTALLINE SILICON [J].

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