ELEKTRONISCHE ZUSTANDE AN REINEN SILIZIUMOBERFLACHEN

被引:7
作者
LAMATSCH, H
机构
来源
PHYSICA STATUS SOLIDI | 1965年 / 9卷 / 01期
关键词
D O I
10.1002/pssb.19650090115
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:119 / &
相关论文
共 18 条
[1]   P-LAYERS ON VACUUM HEATED SILICON [J].
ALLEN, FG ;
BUCK, TM ;
LAW, JT .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) :979-985
[2]   WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON [J].
ALLEN, FG ;
GOBELI, GW .
PHYSICAL REVIEW, 1962, 127 (01) :150-&
[3]  
ALLEN FG, 1957, JAPAN J APPL PHYS, V28, P1910
[4]  
BOONSTRA AH, 1963, P KONINKL NEDERLAND, VB 66, P70
[5]   SURFACE CONDUCTIVITY OF CLEAVED SILICON SURFACES [J].
HANDLER, P .
PHYSICAL REVIEW, 1962, 126 (03) :971-&
[6]   DIE ELEKTRISCHE LEITFAHIGKEIT AN DER OBERFLACHE VON ZINKOXYDKRISTALLEN [J].
HEILAND, G .
ZEITSCHRIFT FUR PHYSIK, 1955, 142 (04) :415-432
[7]   SURFACE STATES ON CLEAN SILICON [J].
HEILAND, G ;
LAMATSCH, H .
SURFACE SCIENCE, 1964, 2 :18-25
[8]  
HEILAND G, 1964, ELEKTRONISCHE ZUSTAN, V3
[9]  
HEILAND G, 1961, FORTSCHR PHYS, V9, P393
[10]  
Jost W., 1937, DIFFUSION CHEMISCHE