ARSENIC DISTRIBUTION IN BILAYERS OF TISI2 ON POLYCRYSTALLINE SILICON DURING HEAT-TREATMENT

[1] BUCHTA R, 1982, 10TH P NORD SEM M HE

[2] Cotter P.G., 1956, J AM CERAM SOC, V39, P11

[3] CROWDER BL, 1979, Patent No. 4180596

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[5] DUFFIN WJ, 1954, ACTA CRYSTALLOGR, V17, P450

[6] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7372 - 7378

[7] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[8] PAN P, 1982, J APPL PHYS, V53, P3959

[9] TITANIUM DISILICIDE IN MOS TECHNOLOGY [J]. PHYSICA SCRIPTA, 1982, 26 (02): : 108 - 112

[10] Sarawat K. C., 1982, IEEE J SOLID-ST CIRC, VSC-17, P275, DOI DOI 10.1109/JSSC.1982.1051729

[1] BUCHTA R, 1982, 10TH P NORD SEM M HE

[2] Cotter P.G., 1956, J AM CERAM SOC, V39, P11

[3] CROWDER BL, 1979, Patent No. 4180596

[4] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[5] DUFFIN WJ, 1954, ACTA CRYSTALLOGR, V17, P450

[6] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7372 - 7378

[7] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792

[8] PAN P, 1982, J APPL PHYS, V53, P3959

[9] TITANIUM DISILICIDE IN MOS TECHNOLOGY [J]. PHYSICA SCRIPTA, 1982, 26 (02): : 108 - 112

[10] Sarawat K. C., 1982, IEEE J SOLID-ST CIRC, VSC-17, P275, DOI DOI 10.1109/JSSC.1982.1051729