INTERFACE STATE DENSITY-MEASUREMENTS WITH A MODIFIED C-V TECHNIQUE

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[2] DOPING PROFILES BY MOSFET DEEP DEPLETION C(V) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) : 121 - 127

[3] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +

[4] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[5] 2-CARRIER NATURE OF INTERFACE-STATE GENERATION IN HOLE TRAPPING AND RADIATION-DAMAGE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 58 - 60

[6] COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 61 - 63

[7] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +

[2] DOPING PROFILES BY MOSFET DEEP DEPLETION C(V) [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (01) : 121 - 127

[3] DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J]. SURFACE SCIENCE, 1971, 28 (01) : 157 - +

[4] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +

[5] 2-CARRIER NATURE OF INTERFACE-STATE GENERATION IN HOLE TRAPPING AND RADIATION-DAMAGE [J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 58 - 60

[6] COMPARISON OF INTERFACE-STATE GENERATION BY 25-KEV ELECTRON-BEAM IRRADIATION IN P-TYPE AND N-TYPE MOS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1975, 27 (02) : 61 - 63

[7] NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO