EPITAXIAL-GROWTH OF SI ON GAP(100) AND SI(111), MONITORED BY SOFT-X-RAY REFLECTION

被引：3

作者：

BRUIJN, MP

MULLER, H

VERHOEVEN, J

VANDERWIEL, MJ

机构：

来源：

SURFACE SCIENCE | 1985年 / 154卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(85)90051-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：601 / 613

页数：13

共 16 条

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