MONTE-CARLO SIMULATION OF HOT-CARRIER TRANSPORT IN REAL SEMICONDUCTOR-DEVICES

被引:11
作者
FISCHETTI, MV
LAUX, SE
LEE, W
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D O I
10.1016/0038-1101(89)90302-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:1723 / 1729
页数:7
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共 30 条
[1]   PERFORMANCE OF A QUARTER-MICROMETER-GATE BALLISTIC ELECTRON HEMT [J].
AWANO, Y ;
KOSUGI, M ;
MIMURA, T ;
ABE, M .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :451-453
[2]  
CALLEGARI AC, 1989, IN PRESS I PHYSICS C
[3]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[4]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[5]  
DIMARIA DJ, 1989, J APPL PHYS, V63, P5882
[6]   MONTE-CARLO ANALYSIS OF ELECTRON-TRANSPORT IN SMALL SEMICONDUCTOR-DEVICES INCLUDING BAND-STRUCTURE AND SPACE-CHARGE EFFECTS [J].
FISCHETTI, MV ;
LAUX, SE .
PHYSICAL REVIEW B, 1988, 38 (14) :9721-9745
[7]  
FISCHETTI MV, 1989, IN PRESS INSULATING
[8]  
FOUNTAIN GG, 1988, I PHYSICS C SERIES, P375
[9]  
FREEOUF JL, 1989, IN PRESS J VAC SCI B, V7
[10]   REAL SPACE TRANSFER - GENERALIZED-APPROACH TO TRANSPORT IN CONFINED GEOMETRIES [J].
HESS, K .
SOLID-STATE ELECTRONICS, 1988, 31 (3-4) :319-324