DEEP IMPURITY LEVELS OF COBALT IN SILICON

被引：10

作者：

NAKASHIMA, H

TSUMORI, Y

MIYAGAWA, T

HASHIMOTO, K

机构：

[1] Department of Electrical Engineering, Kyushu University, Higashi-ku, Fukuoka, 812, Hakozaki

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 08期

关键词：

Cobalt; Deep level; Deep trap; DL TS; Silicon; Tungsten;

D O I：

10.1143/JJAP.29.1395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been believed until now that cobalt in silicon forms an acceptor level at around Ec–0.53 eV and a donor level at around Ev+0.35 eV. However, it is found that an acceptor level at Ec–(0.40±0.02)eV and a donor level at Ev+(0.23±0.01) eV are attributed to the amphoteric cobalt levels from the DLTS measurements for the samples diffused with cobalt deposited from the evaporation of a pure cobalt wire. The former levels (0.53 eV and 0.35 eV) are observed only for the samples prepared by the cobalt deposition from a tungsten filament wrapped with cobalt wire, and the tungsten contamination is regarded to be the cause of these levels. © 1990 The Japan Society of Applied Physics.

引用

页码：1395 / 1398

页数：4