CARRIER VELOCITY-FIELD CHARACTERISTICS AND ALLOY SCATTERING POTENTIAL IN SI1-XGEX/SI

被引：30

作者：

LI, SH

HINCKLEY, JM

SINGH, J

BHATTACHARYA, PK

机构：

[1] Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.109687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The alloy scattering potential is an important parameter in SiGe alloys since it not only affects the velocity-field characteristics for carrier transport, but also allows increased optical transitions by relaxing k-selection rules. In this letter, we report on the velocity-field measurements for relaxed and coherently strained SiGe alloys. The alloy scattering potential is obtained from a careful fit to the data. The hole velocity at any field is found to have a bowing behavior as a function of alloy composition. This reflects a strong alloy scattering potential which is calculated to be 0.6 eV for the valence band.

引用

页码：1393 / 1395

页数：3

共 14 条

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