INSITU SCHOTTKY CONTACTS TO MOLECULAR-BEAM EXPITAXIALLY GROWN GALLIUM ANTIMONIDE

被引：26

作者：

POOLE, I ^{[1
]}

LEE, ME ^{[1
]}

MISSOUS, M ^{[1
]}

SINGER, KE ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3988 / 3990

页数：3

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[7] THE EFFECTS OF VACUUM CONDITIONS ON EPITAXIAL AL/GAAS CONTACTS FORMED BY MOLECULAR-BEAM EPITAXY [J].

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[8] NEW AND UNIFIED MODEL FOR SCHOTTKY-BARRIER AND III-V INSULATOR INTERFACE STATES FORMATION [J].

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