A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS

[21] KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1

[22] Lu N. C.-C., 1982, International Electron Devices Meeting. Technical Digest, P781

[23] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 818 - 830

[24] LU NCC, 1980, OCT P EL SOC FALL M, P1321

[25] LU NCC, 1980, IEEE ELECTRON DEVICE, V1, P38

[26] LU NCC, 1981, IEEE ELECTRON DEV LE, V2, P95

[27] LU NCC, 1981, THESIS STANFORD ELEC

[28] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[29] MANDURAH MM, 1980, OCT P EL SOC FALL M, P1103

[30] ON THE MOBILITY OF POLYCRYSTALLINE SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (04) : 297 - 303

[21] KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1

[22] Lu N. C.-C., 1982, International Electron Devices Meeting. Technical Digest, P781

[23] MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) : 818 - 830

[24] LU NCC, 1980, OCT P EL SOC FALL M, P1321

[25] LU NCC, 1980, IEEE ELECTRON DEVICE, V1, P38

[26] LU NCC, 1981, IEEE ELECTRON DEV LE, V2, P95

[27] LU NCC, 1981, THESIS STANFORD ELEC

[28] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[29] MANDURAH MM, 1980, OCT P EL SOC FALL M, P1103

[30] ON THE MOBILITY OF POLYCRYSTALLINE SEMICONDUCTORS [J]. SOLID-STATE ELECTRONICS, 1980, 23 (04) : 297 - 303