A CONDUCTION MODEL FOR SEMICONDUCTOR GRAIN-BOUNDARY SEMICONDUCTOR BARRIERS IN POLYCRYSTALLINE-SILICON FILMS

被引：111

作者：

LU, NC

GERZBERG, L

LU, CY

MEINDL, JD

机构：

[1] STANFORD UNIV,INTEGRATED CIRCUITS LAB,STANFORD,CA 94305

[2] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/T-ED.1983.21087

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：137 / 149

页数：13

相关论文

共 44 条

[41] CURRENT TRANSPORT IN DOPED POLYCRYSTALLINE SILICON
TANIGUCHI, M
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OSAKA, Y
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SHIMIZU, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (04) : 665 - 673
[42] CARRIER TRANSPORT IN OXYGEN-RICH POLYCRYSTALLINE-SILICON FILMS
TARNG, ML
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 4069 - 4076
[43] INTERFACIAL LAYER THEORY OF THE SCHOTTKY-BARRIER DIODES
WU, CY
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) : 3786 - 3789
[44] CONDUCTION PROPERTIES OF CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON
YOSHIHARA, T
YASUOKA, A
ABE, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1603 - 1607

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