ELECTRICAL-PROPERTIES OF ANTIMONY-DOPED P-TYPEHG0.78CD0.22TE LIQUID-PHASE-EPITAXY FILMS

被引:22
作者
CHEN, MC
DODGE, JA
机构
[1] Texas Instruments Inc, Dallas, TX,, USA, Texas Instruments Inc, Dallas, TX, USA
关键词
D O I
10.1016/0038-1098(86)90685-X
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
22
引用
收藏
页码:449 / 452
页数:4
相关论文
共 23 条
[1]   CONDUCTION ELECTRON SCATTERING BY IONIZED DONORS IN INSB AT 80DEGREES K [J].
BATE, RT ;
BAXTER, RD ;
REID, FJ ;
BEER, AC .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (08) :1205-&
[2]   EFFECTS OF ANNEALING ON HG0.79CD0.21 TE EPILAYERS [J].
CHU, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5876-5879
[3]   INFRARED OPTICAL-ABSORPTION OF HG1-XCDXTE [J].
FINKMAN, E ;
NEMIROVSKY, Y .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4356-4361
[4]   MAGNETO-OPTICAL INVESTIGATIONS OF A NOVEL SUPER-LATTICE - HGTE-CDTE [J].
GULDNER, Y ;
BASTARD, G ;
VIEREN, JP ;
VOOS, M ;
FAURIE, JP ;
MILLION, A .
PHYSICAL REVIEW LETTERS, 1983, 51 (10) :907-910
[5]   ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].
HANSEN, GL ;
SCHMIT, JL ;
CASSELMAN, TN .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101
[6]   EFFECT OF RANDOM INHOMOGENEITIES ON ELECTRICAL AND GALVANOMAGNETIC MEASUREMENTS [J].
HERRING, C .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (11) :1939-1953
[7]   STATUS OF POINT-DEFECTS IN HGCDTE [J].
JONES, CE ;
JAMES, K ;
MERZ, J ;
BRAUNSTEIN, R ;
BURD, M ;
EETEMADI, M ;
HUTTON, S ;
DRUMHELLER, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :131-137
[8]  
KALISHER MH, 1984, J CRYST GROWTH, V70, P369
[9]   HALL AND DRIFT MOBILITY OF POLAR P-TYPE SEMICONDUCTORS .2. APPLICATION TO ZNTE, CDTE, AND ZNSE [J].
KRANZER, D .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1973, 6 (20) :2977-2987
[10]  
LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175