HIGH-TEMPERATURE OPERATION OF INGAAS/INGAASP COMPRESSIVE-STRAINED QW LASERS WITH LOW-THRESHOLD CURRENTS

被引：6

作者：

NOBUHARA, H

TANAKA, K

YAMAMOTO, T

MACHIDA, T

FUJII, T

WAKAO, K

机构：

[1] Optical Devices Laboratory, Optical Interconnection Division, Fujitsu Laboratories Ltd.

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期

关键词：

D O I：

10.1109/68.257158

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the influence of the band gap wavelength of barrier layers and separate confinement heterostructure (SCH) layers lambda(SCH) on the high-temperature operation of InGaAs/InGaAsP compressive-strained quantum-well (QW) lasers. The optimum lambda(SCH) was 1.2 mum, at which carriers were sufficiently confined into quantum wells. The QW laser with lambda(SCH) = 1.2 mum exhibited low threshold currents of 2.3 mA at 20-degrees-C and 9.7 mA at 100-degrees-C and CW lasing up to 150-degrees-C.

引用

页码：961 / 962

页数：2

共 4 条

[1]

KUSUNOKI T, 1988, FUJITSU SCI TECH J, V24, P133

[2] HIGH-TEMPERATURE OPERATION OF 1.3 MU-M GAINASP/INP GRINSCH STRAINED-LAYER QUANTUM-WELL LASERS [J].