SPECTROSCOPY CHARGE AMPLIFIER FOR DETECTORS WITH INTEGRATED FRONT-END FET

被引：19

作者：

BERTUCCIO, G

FASOLI, L

FIORINI, C

SAMPIETRO, M

机构：

[1] Dipartimento di Elettronica e Informazione, Politecnico di Milano

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 04期

关键词：

D O I：

10.1109/23.467728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A charge amplifier, especially designed for FET integrated on silicon radiation detectors, is presented. The circuit is based on the forward biased FET amplifier configuration, which does not require the feedback resistor nor additional devices for resetting. The severe constraints on the preamplifier design, imposed by the low transconductance of small size integrated FET's, are analyzed as far as loop-gain, bandwidth, and noise are concerned. A circuit topology which satisfies all the requirements even at relative fast shaping time (1 mu s) is proposed and experimentally tested.

引用

收藏

页码：1399 / 1405

页数：7

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