A CPD IMAGE SENSOR WITH AN SOI STRUCTURE

被引:3
作者
FUJII, E
SENDA, K
EMOTO, F
HIROSHIMA, Y
机构
[1] Matsushita Electronics Corp, Osaka, Jpn, Matsushita Electronics Corp, Osaka, Jpn
关键词
D O I
10.1109/16.2507
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
11
引用
收藏
页码:642 / 645
页数:4
相关论文
共 11 条
[1]   2/3-INCH FORMAT MOS SINGLE-CHIP COLOR IMAGER [J].
AOKI, M ;
ANDO, H ;
OHBA, S ;
TAKEMOTO, I ;
NAGAHARA, S ;
NAKANO, T ;
KUBO, M ;
FUJITA, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :745-750
[2]   ANISOTROPIC ETCHING OF SILICON [J].
BEAN, KE .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1185-1193
[3]   LASER CRYSTALLIZATION OF THIN SI FILMS ON AMORPHOUS INSULATING SUBSTRATES [J].
CELLER, GK .
JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) :429-444
[4]  
Ishihara Y., 1982, ISSCC, P168
[5]  
Kosonocky W. F., 1983, International Electron Devices Meeting 1983. Technical Digest, P1
[6]   SINGLE-CRYSTAL SILICON-ON-OXIDE BY A SCANNING CW LASER-INDUCED LATERAL SEEDING PROCESS [J].
LAM, HW ;
PINIZZOTTO, RF ;
TASCH, AF .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) :1981-1986
[7]   TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J].
NISSIM, YI ;
LIETOILA, A ;
GOLD, RB ;
GIBBONS, JF .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :274-279
[8]  
OHKURA M, 1985, 17TH C SOL STAT DEV, P143
[9]   ANALYSIS OF CHARGE-PRIMING TRANSFER EFFICIENCY IN CPD IMAGE SENSORS [J].
SENDA, K ;
TERAKAWA, S ;
HIROSHIMA, Y ;
KUNII, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1324-1328
[10]  
Senda K., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P369