LASER SCANNING TOMOGRAPHY - A NON DESTRUCTIVE QUALIFICATION TEST FOR SEMICONDUCTORS

被引：8

作者：

FILLARD, JP

机构：

来源：

JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期

关键词：

D O I：

10.1051/jphyscol:1988498

中图分类号：

学科分类号：

摘要：

引用

页码：463 / 470

页数：8

共 37 条

[1] EL2 RELATED LEVELS IN GAAS-SI - TRANSMISSION AND DISPERSION IN INFRARED IMAGING
CASTAGNE, M
FILLARD, JP
BONNAFE, J
[J]. SOLID STATE COMMUNICATIONS, 1985, 54 (07) : 653 - 656
[2] ARSENIC PRECIPITATION AT DISLOCATIONS IN GAAS SUBSTRATE MATERIAL
CULLIS, AG
AUGUSTUS, PD
STIRLAND, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2556 - 2560
[3] THE ROLE OF EL2 CENTERS IN INFRA-RED IMAGES OF DEFECTS IN GAAS MATERIALS
FILLARD, J
MONTGOMERY, P
GALL, P
ASGARINIA, M
BONNAFE, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (03): : 384 - 388
[4] FILLARD JP, 1987, ANN TELECOMMUN, V42, P149
[5] OBSERVATION OF CELLULAR STRUCTURES OF DEFECTS IN SEMIINSULATING INP-FE
FILLARD, JP
BAROUDI, A
GALL, P
BONNAFE, J
FAVENNEC, PN
COQUILLE, R
[J]. SOLID STATE COMMUNICATIONS, 1987, 64 (09) : 1243 - 1246
[6] DEFECT STRUCTURES IN INP CRYSTALS BY LASER SCANNING TOMOGRAPHY
FILLARD, JP
GALL, P
BAROUDI, A
GEORGE, A
BONNAFE, J
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08): : L1255 - L1257
[7] FILLARD JP, 1986, MRS S P, V69
[8] FILLARD JP, 1988, 3 5 SEM INS C MALM
[9] FILLARD JP, 1987, APR NATO WORKSH OXF
[10] GALL P, 1987, MATER SCI MONOGRAPHS, V44, P215