THE ROLE OF EL2 CENTERS IN INFRA-RED IMAGES OF DEFECTS IN GAAS MATERIALS

[1] HIGH-RESOLUTION IMAGING OF THE EL2 DISTRIBUTION IN THIN SEMIINSULATING GAAS WAFERS - A COMPARISON WITH X-RAY TOPOGRAPHY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2954 - 2958

[2] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 610 - 612

[3] BUNDO P, 1986, DEF SEM COND PARIS, P1229

[4] BUNOD P, IN PRESS MAT SC MONO

[5] EL2 RELATED LEVELS IN GAAS-SI - TRANSMISSION AND DISPERSION IN INFRARED IMAGING [J]. SOLID STATE COMMUNICATIONS, 1985, 54 (07) : 653 - 656

[6] CASTAGNE M, 1986, DEF SEM COND PARIS, V371

[7] DISCHLER B, 1986, DEF SEM COND PARIS, P359

[8] DOBRILLA P, 1986, APPL PHYS LETT, V48, P631

[9] DOBRILLA P, IN PRESS MAT SC MONO

[10] THERMAL REGENERATION OF THE EL2 CENTER UNQUENCHED CONFIGURATION IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (03): : 149 - 153

[1] HIGH-RESOLUTION IMAGING OF THE EL2 DISTRIBUTION IN THIN SEMIINSULATING GAAS WAFERS - A COMPARISON WITH X-RAY TOPOGRAPHY [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2954 - 2958

[2] DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 610 - 612

[3] BUNDO P, 1986, DEF SEM COND PARIS, P1229

[4] BUNOD P, IN PRESS MAT SC MONO

[5] EL2 RELATED LEVELS IN GAAS-SI - TRANSMISSION AND DISPERSION IN INFRARED IMAGING [J]. SOLID STATE COMMUNICATIONS, 1985, 54 (07) : 653 - 656

[6] CASTAGNE M, 1986, DEF SEM COND PARIS, V371

[7] DISCHLER B, 1986, DEF SEM COND PARIS, P359

[8] DOBRILLA P, 1986, APPL PHYS LETT, V48, P631

[9] DOBRILLA P, IN PRESS MAT SC MONO

[10] THERMAL REGENERATION OF THE EL2 CENTER UNQUENCHED CONFIGURATION IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (03): : 149 - 153