OPTICAL MAPPING OF RESIDUAL-STRESS IN CZOCHRALSKI GROWN GAAS

被引：15

作者：

DOBRILLA, P

BLAKEMORE, JS

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 19期

关键词：

D O I：

10.1063/1.96960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1303 / 1305

页数：3

共 16 条

[1]

Born M., 1975, PRINCIPLES OPTICS, VFifth

[2] DIRECT OBSERVATION OF FINE-STRUCTURE IN THE CONCENTRATION OF THE DEEP DONOR [EL2] AND ITS CORRELATION WITH DISLOCATIONS IN UNDOPED, SEMI-INSULATING GAAS [J].

BROZEL, MR ;

GRANT, I ;

WARE, RM ;

STIRLAND, DJ ;

SKOLNICK, MS .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1109-1118

[3]

DiLorenzo J. V., 1984, Semi-Insulating III-V materials, P308

[4] EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE [J].

DOBRILLA, P ;

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) :208-218

[5]

DOBRILLA P, UNPUB J APPL PHYS

[6] INTRINSIC PIEZOBIREFRINGENCE OF GE, SI, AND GAAS [J].

HIGGINBOTHAM, CW ;

CARDONA, M ;

POLLAK, FH .

PHYSICAL REVIEW, 1969, 184 (03) :821-+

[7] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

[8]

KATSUMATA T, 1986, REV SCI INSTRUM, V58, P202

[9]

Kleber W., 1970, INTRO CRYSTALLOGRAPH

[10] A THERMOELASTIC ANALYSIS OF THE THERMAL-STRESS PRODUCED IN A SEMI-INFINITE CYLINDRICAL SINGLE-CRYSTAL DURING THE CZOCHRALSKI GROWTH [J].

KOBAYASHI, N ;

IWAKI, T .

JOURNAL OF CRYSTAL GROWTH, 1985, 73 (01) :96-110

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