THEORY OF TETRAHEDRAL-SITE INTERSTITIAL S-BONDED AND P-BONDED IMPURITIES IN SI

被引：57

作者：

SANKEY, OF ^{[1
]}

DOW, JD ^{[1
]}

机构：

[1] UNIV ILLINOIS, MAT RES LAB, URBANA, IL 61801 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.27.7641

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7641 / 7653

页数：13

共 51 条

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