HIGH-POWER, LOW-THRESHOLD, SINGLE-MODE GAINASP INP LASER BY LOW-TEMPERATURE, SINGLE-STEP LIQUID-PHASE EPITAXY

被引：4

作者：

HORIKAWA, H

IMANAKA, K

MATOBA, A

KAWAI, Y

SAKUTA, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：328 / 330

页数：3

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[6] HIGH-POWER SINGLE-MODE INGAASP LASERS FABRICATED BY SINGLE STEP LIQUID-PHASE EPITAXY
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