TRANSVERSE-MODE STABILIZED INGAASP-INP (LAMBDA=1.3-MU-M) PLANO-CONVEX WAVE-GUIDE LASERS

被引：21

作者：

UENO, M ^{[1
]}

SAKUMA, I ^{[1
]}

FURUSE, T ^{[1
]}

MATSUMOTO, Y ^{[1
]}

KAWANO, H ^{[1
]}

IDE, Y ^{[1
]}

MATSUMOTO, S ^{[1
]}

机构：

[1] NIPPON ELECT CO LTD,BASIC TECHNOL RES LABS,TAKATSU KU,KAWASAKI 211,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 09期

关键词：

D O I：

10.1109/JQE.1981.1071348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1930 / 1940

页数：11

共 36 条

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[2] CW HIGH-POWER SINGLE-MODE OPERATION OF CONSTRICTED DOUBLE-HETEROJUNCTION ALGAAS LASERS WITH A LARGE OPTICAL CAVITY
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (03) : 190 - 192
[3] GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS
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TSANG, WT
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 234 - 237
[4] NONPLANAR LARGE OPTICAL CAVITY GAAS-GAALAS SEMICONDUCTOR-LASER
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STREIFER, W
PELED, S
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (10) : 734 - 736
[5] EMBEDDED EPITAXIAL-GROWTH OF LOW-THRESHOLD GAINASP-INP INJECTION-LASERS
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YU, KL
MARGALIT, S
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 301 - 303
[6] DOI A, 1979, APPL PHYS LETT, V34, P393, DOI 10.1063/1.90808
[7] A CIRCULAR-HARMONIC COMPUTER ANALYSIS OF RECTANGULAR DIELECTRIC WAVEGUIDES
GOELL, JE
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1969, 48 (07): : 2133 - +
[8] CARRIER AND GAIN SPATIAL PROFILES IN GAAS STRIPE GEOMETRY LASERS
HAKKI, BW
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (11) : 5021 - 5028
[9] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS
HIRAO, M
DOI, A
TSUJI, S
NAKAMURA, M
AIKI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4539 - 4540
[10] ROOM-TEMPERATURE CW OPERATION OF BURIED-STRIPE DOUBLE-HETEROSTRUCTURE GALNASP/INP DIODE-LASERS
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SHEN, CC
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 429 - 431

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