TEMPERATURE-DEPENDENCE OF CURRENTS IN THIN-FILMS OF SILICON-OXIDE

被引：3

作者：

BRAZIS, R ^{[1
]}

PIPINYS, P ^{[1
]}

RIMEIKA, A ^{[1
]}

机构：

[1] VILNIUS TEACHERS INST,DEPT PHYS,VILNIUS 232034,LISSR

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 83卷 / 01期

关键词：

D O I：

10.1002/pssa.2210830165

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K69 / K71

页数：3

共 13 条

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