DC CHARACTERISTICS OF MOS STRUCTURES AND HOPPING CURRENTS IN THERMALLY GROWN SIO2-FILMS

被引:6
作者
KRAUSE, H
机构
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 72卷 / 02期
关键词
D O I
10.1002/pssa.2210720222
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:607 / 616
页数:10
相关论文
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