INFLUENCE OF TEMPERATURE ON DEFECT CREATION DURING PLASMA EXPOSURE OF SIO2-FILMS

Chemical vapor deposited silicon dioxide films have been exposed to ultraviolet radiation from a microwave excited Kr/F plasma. Sample temperatures during exposure were in the range 82-300 K. The creation of oxygen-vacancy like defects was measured as a function of exposure time and temperature. Two possible defect creation mechanisms are suggested which would account for reduced creation efficiency at low temperatures, one involving hole injection from the substrate and the other, interaction of H with Si - H bonds. Both processes are diffusion limited.