EFFECT OF ION-IMPLANTATION AND SURFACE-STRUCTURE OF SILICON ON DIAMOND FILM NUCLEATION

被引：9

作者：

KOBAYASHI, K ^{[1
]}

KUMAGAI, M ^{[1
]}

KARASAWA, S ^{[1
]}

WATANABE, T ^{[1
]}

TOGASHI, F ^{[1
]}

机构：

[1] SCI UNIV TOKYO,SHINJUKU KU,TOKYO 162,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90357-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effect of ion implantation and scratch of silicon on diamond film nucleation has been studied. After the Si substrate was scratched, 100 keV Ar+ ions were implanted. Diamond film was deposited on the implanted Si. Nucleation density decreased as the dose amount was increased. When the dose amount was greater than 3 x 10(15) ions/cm2, almost no diamond particles had grown on the implanted area. The reason why ion implantation on Si substrates causes a decrease in the nucleation density was examined by reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) in air and Rutherford backscattering spectrometry (RBS).

引用

页码：408 / 412

页数：5

共 6 条

[1]

HIGUCHI K, 1989, J JPN SOC POWDER POW, V36, P139

[2] SELECTIVE DEPOSITION OF DIAMOND CRYSTALS BY CHEMICAL VAPOR-DEPOSITION USING A TUNGSTEN-FILAMENT METHOD [J].