FIELD-DEPENDENT PERMITTIVITY IN METAL-SEMICONDUCTING SRTIO3 SCHOTTKY DIODES

The field dependence of the dielectric constant of SrTiO3 is investigated using the capacitance versus bias voltage characteristics of various metal-SrTiO3:Nb Schottky diodes. The relative dielectric constant is shown to decrease one order of magnitude for electric fields ranging from 0.1 to 10 MV/cm. At low fields the permittivity follows the Curie-Weiss law, whereas at fields larger than 500 kV/cm the permittivity is nearly temperature independent. At high doping densities the field dependent permittivity gives rise to a reduction of the depletion width of the Schottky diode.© 1995 American Institute of Physics.