HIGH-TEMPERATURE KINK OF THE CONDUCTIVITY OF DOPED A-SI-H FILMS

被引：16

作者：

BEYER, W ^{[1
]}

OVERHOF, H ^{[1
]}

机构：

[1] UNIV GESAMTHSCH PADERBORN, FACHBEREICH PHYS, D-4790 PADERBORN, FED REP GER

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90581-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：301 / 304

页数：4

共 10 条

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[8] DENSITY OF STATES IN AMORPHOUS-SILICON DETERMINED FROM TRANSPORT EXPERIMENTS [J].

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[9] POST-HYDROGENATION OF CVD DEPOSITED A-SI FILMS [J].

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[10] PAS STUDY OF GAP-STATE PROFILES OF P-DOPED AND UNDOPED A-SI-H [J].

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