COARSENING PHENOMENON OF SI CLUSTERS ON ARTIFICIAL NUCLEATION SITES

被引:6
作者
KUMOMI, H
YONEHARA, T
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D O I
10.1063/1.101023
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O59 [应用物理学];
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页码:2648 / 2650
页数:3
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共 9 条
[1]   NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J].
CLAASSEN, WAP ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :194-202
[2]   SELECTIVE DEPOSITION OF DIAMOND CRYSTALS BY CHEMICAL VAPOR-DEPOSITION USING A TUNGSTEN-FILAMENT METHOD [J].
HIRABAYASHI, K ;
TANIGUCHI, Y ;
TAKAMATSU, O ;
IKEDA, T ;
IKOMA, K ;
IWASAKIKURIHARA, N .
APPLIED PHYSICS LETTERS, 1988, 53 (19) :1815-1817
[3]   FINE PARTICLES OF SILICON .1. CRYSTAL-GROWTH OF SPHERICAL-PARTICLES OF SI [J].
IIJIMA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (03) :357-364
[5]   MOBILITY OF SMALL CLUSTERS ON THE SUBSTRATE SURFACE [J].
KINOSITA, K .
THIN SOLID FILMS, 1981, 85 (3-4) :223-238
[6]   RATE EQUATION APPROACHES TO THIN-FILM NUCLEATION KINETICS [J].
VENABLES, JA .
PHILOSOPHICAL MAGAZINE, 1973, 27 (03) :697-738
[7]   MANIPULATION OF NUCLEATION SITES AND PERIODS OVER AMORPHOUS SUBSTRATES [J].
YONEHARA, T ;
NISHIGAKI, Y ;
MIZUTANI, H ;
KONDOH, S ;
YAMAGATA, K ;
NOMA, T ;
ICHIKAWA, T .
APPLIED PHYSICS LETTERS, 1988, 52 (15) :1231-1233
[8]  
YONEHARA T, 1988, MATER RES SOC S P, V106, P21
[9]   ROLE OF OSTWALD RIPENING IN ISLANDING PROCESSES [J].
ZINKEALLMANG, M ;
FELDMAN, LC ;
NAKAHARA, S .
APPLIED PHYSICS LETTERS, 1987, 51 (13) :975-977