MANIPULATION OF NUCLEATION SITES AND PERIODS OVER AMORPHOUS SUBSTRATES

被引:18
作者
YONEHARA, T
NISHIGAKI, Y
MIZUTANI, H
KONDOH, S
YAMAGATA, K
NOMA, T
ICHIKAWA, T
机构
关键词
D O I
10.1063/1.99675
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1231 / 1233
页数:3
相关论文
共 9 条
[1]   NUCLEATION OF CVD SILICON ON SIO2 AND SI3N4 SUBSTRATES .1. SIH4-HCL-H2 SYSTEM AT HIGH-TEMPERATURES [J].
CLAASSEN, WAP ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (01) :194-202
[2]  
CULLEN GW, 1983, J CRYST GROWTH, V63
[3]  
GIVARGIZOV EI, 1982, CURRENT TOPICS MATER, V10, P1
[5]   SELECTIVE EPITAXIAL DEPOSITION OF SILICON [J].
JOYCE, BD ;
BALDREY, JA .
NATURE, 1962, 195 (4840) :485-&
[6]   SILICON-ON-INSULATOR BY GRAPHOEPITAXY AND ZONE-MELTING RECRYSTALLIZATION OF PATTERNED FILMS [J].
SMITH, HI ;
GEIS, MW ;
THOMPSON, CV ;
ATWATER, HA .
JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) :527-546
[7]  
WEAVER HT, 1987, IEEE CIRCUIT DEVIC, V3, P3
[8]   COMPETING PROCESSES OF SI MOLECULAR-BEAM REACTIVE ETCHING AND SIMULTANEOUS DEPOSITION ON FILM AND BULK SIO2 [J].
YONEHARA, T ;
YOSHIOKA, S ;
MIYAZAWA, S .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6839-6843
[9]   GRAPHOEPITAXY OF GE ON SIO2 BY SOLID-STATE SURFACE-ENERGY-DRIVEN GRAIN-GROWTH [J].
YONEHARA, T ;
SMITH, HI ;
THOMPSON, CV ;
PALMER, JE .
APPLIED PHYSICS LETTERS, 1984, 45 (06) :631-633