GRAPHOEPITAXY OF GE ON SIO2 BY SOLID-STATE SURFACE-ENERGY-DRIVEN GRAIN-GROWTH

被引：29

作者：

YONEHARA, T

SMITH, HI

THOMPSON, CV

PALMER, JE

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 06期

关键词：

D O I：

10.1063/1.95336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：631 / 633

页数：3

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