LATTICE-PARAMETERS OF SPUTTERED MOS2 FILMS

被引：56

作者：

BUCK, V

机构：

[1] Physics Department (FB7), Universität GH Essen, Universitätsstraße 5, D-4300 Essen F.R.G. In cooperation with the Department of Lubricants and Tribology of DLR (Deutsche Forschungsund Versuchsanstalt für Luft- und Raumfahrt e.V.,)

来源：

THIN SOLID FILMS | 1991年 / 198卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(91)90334-T

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The stoichiometry, morphology and lattice constants of sputtered MoS2 films depend mainly on the partial pressure of water during sputtering or rather on the substitution of sulphur by oxygen that follows from this contamination. Models describing the measured lattice contraction in the 001 direction and lattice expansion in the 100 direction with increasing oxygen content of the films are derived. Furthermore, the growth velocities of the grains are introduced as a second parameter to characterize the properties of the films.

引用

页码：157 / 167

页数：11

共 29 条

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