UNIFIED ANALYSIS OF THE BULK UNIPOLAR DIODE

被引：14

作者：

HABIB, SE ^{[1
]}

机构：

[1] UNIV WALES UNIV COLL SWANSEA,DEPT ELECT & ELECT ENGN,SWANSEA SA2 8PP,W GLAM,WALES

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/T-ED.1983.21079

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：86 / 89

页数：4

共 9 条

[1] NEW RECTIFYING SEMICONDUCTOR STRUCTURE BY MOLECULAR-BEAM EPITAXY [J].

ALLYN, CL ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1980, 36 (05) :373-376

[2]

BOARD K, 1983, IEEE T ELECTRON DEVI, V30, P90

[3]

CHANDRA A, 1979, ELECTRON LETT, V15, P91

[4] AN ULTRAHIGH SPEED MODULATED BARRIER PHOTO-DIODE MADE ON P-TYPE GALLIUM-ARSENIDE SUBSTRATES [J].

CHEN, CY ;

CHO, AY ;

GARBINSKI, PA ;

BETHEA, CG .

ELECTRON DEVICE LETTERS, 1981, 2 (11) :290-292

[5] CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].

KAZARINOV, RF ;

LURYI, S .

APPLIED PHYSICS LETTERS, 1981, 38 (10) :810-812

[6] PUNCH-THROUGH CURRENTS IN P+NP+ AND N+PN+ SANDWICH STRUCTURES .1. INTRODUCTION AND BASIC CALCULATIONS [J].

LOHSTROH, J ;

KOOMEN, JJM ;

VANZANTEN, AT ;

SALTERS, RHW .

SOLID-STATE ELECTRONICS, 1981, 24 (09) :805-814

[7]

MALIK RJ, 1980, ELECTRON LETT, V16, P837

[8] MAJORITY-CARRIER CAMEL DIODE [J].

SHANNON, JM .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :63-65

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P388

← 1 →