TEMPERATURE-DEPENDENCE OF THE HALL-EFFECT ELECTRON-CONCENTRATION IN NORMAL-AL0.28GA0.72AS/GAAS HETEROSTRUCTURES

被引：11

作者：

SVENSSON, SP

SWANSON, AW

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 08期

关键词：

D O I：

10.1063/1.336945

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2870 / 2878

页数：9

共 19 条

[1]

[Anonymous], 1978, HETEROSTRUCTURE LASE

[2]

Blakemore J., 1962, INT SERIES MONOGRAPH, V3

[3] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[4] EXPLICIT LOCAL EXCHANGE-CORRELATION POTENTIALS [J].

HEDIN, L ;

LUNDQVIS.BI .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14) :2064-&

[5] NEGATIVE CHARGE, BARRIER HEIGHTS, AND THE CONDUCTION-BAND DISCONTINUITY IN ALXGA1-XAS CAPACITORS [J].

HICKMOTT, TW ;

SOLOMON, PM ;

FISCHER, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2844-2853

[6] CHEMISORPTION-INDUCED DEFECTS ON GAAS(110) SURFACES [J].

MONCH, W ;

GANT, H .

PHYSICAL REVIEW LETTERS, 1982, 48 (07) :512-515

[7]

PERITZ RL, 1958, PHYS REV, V110, P1254

[8]

Rhoderick E.H., 1978, METAL SEMICONDUCTORS

[9] SHALLOW AND DEEP DONORS IN DIRECT-GAP N-TYPE ALXGA1-XAS-SI GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCHUBERT, EF ;

PLOOG, K .

PHYSICAL REVIEW B, 1984, 30 (12) :7021-7029

[10] SELECTIVELY DOPED N-ALXGA1-XAS/GAAS HETEROSTRUCTURES WITH HIGH-MOBILITY TWO-DIMENSIONAL ELECTRON-GAS FOR FIELD-EFFECT TRANSISTORS .1. EFFECT OF PARALLEL CONDUCTANCE [J].

SCHUBERT, EF ;

PLOOG, K ;

DAMBKES, H ;

HEIME, K .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 33 (02) :63-76

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