TIN-DOPED GAAS EPILAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TRIETHYLGALLIUM AND TETRAETHYLTIN

被引：2

作者：

LEE, MK ^{[1
]}

CHANG, CY ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,ELECTR & ELECT ENGN RES INST,TAINAN,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 08期

关键词：

D O I：

10.1063/1.337066

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2831 / 2834

页数：4

共 23 条

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