INVESTIGATION OF SN-DOPED GAAS EPILAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

被引：13

作者：

LEE, MK

CHANG, CY

SU, YK

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.93737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：88 / 89

页数：2

相关论文

共 8 条

[1] CHARACTERIZATION OF FAAS EPITAXIAL LAYERS BY LOW-PRESSURE MOVPE USING TEG AS GA SOURCE
CHANG, CY
SU, YK
LEE, MK
CHEN, LG
HOUNG, MP
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 24 - 29
[2] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735
[3] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS
MANASEVIT, HM
SIMPSON, WI
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +
[4] SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
MANASEVIT, HM
[J]. APPLIED PHYSICS LETTERS, 1968, 12 (04) : 156 - +
[5] SURFACE SEGREGATION OF SN DURING MBE OF N-TYPE GAAS ESTABLISHED BY SIMS AND AES
PLOOG, K
FISCHER, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 255 - 259
[6] GROWTH AND EVALUATION OF EPITAXIAL GAAS FOR MICROWAVE DEVICES
ROSZTOCZY, FE
KINOSHITA, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : 439 - 444
[7] VPE GROWTH OF ALXGA1-XAS
STRINGFELLOW, GB
HALL, HT
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 43 (01) : 47 - 60
[8] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
WOOD, CEC
JOYCE, BA
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4854 - 4861