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RELIABILITY OF VAPOR-GROWN PLANAR IN0.53GA0.47AS/INP P-I-N PHOTODIODES WITH VERY HIGH FAILURE ACTIVATION-ENERGY

被引：23
作者：
FORREST, SR
BAN, VS
GASPARIAN, G
GAY, D
OLSEN, GH
机构：
[1] EPITAXX INC,PRINCETON,NJ 08540
[2] UNIV SO CALIF,CTR PHOTON TECHNOL,DEPT MAT SCI,LOS ANGELES,CA 90089
来源：
IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期
关键词：
D O I：
10.1109/55.695
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
5
引用
收藏
页码：217 / 219
页数：3
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