CHARACTERIZATION OF SEMICONDUCTOR EPITAXIAL LAYER INTERFACES BY PERSISTENT PHOTOCONDUCTIVITY

被引：16

作者：

ANAGNOSTAKIS, EA

机构：

[1] Section of Solid State Physics, Department of Physics, University of Athens

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 126卷 / 02期

关键词：

D O I：

10.1002/pssa.2211260211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impurity concentration and the carrier mobility are determined as functions of depth within semiconductor epitaxial layer interfaces by persistent photoconductivity (PP) measurements. The characterisation model through which the dependence of the PP upon cummulative photon dose is processed takes into account the macroscopic potential barrier between the epitaxial layer and the substrate of the samples.

引用

页码：397 / 410

页数：14

共 17 条

[1] ION-IMPLANTATION INTO GALLIUM-ARSENIDE [J].