DEFECT STRUCTURE AND POLYTYPISM IN SILICON CARBIDE

被引：27

作者：

GRIFFITHS, LB

机构：

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1966年 / 27卷 / 02期

关键词：

D O I：

10.1016/0022-3697(66)90031-X

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：257 / +

页数：1

共 22 条

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[3]

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[6]

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[7]

GREEBE CAA, 1963, PHILIPS RES REP S1

[8] NATURE OF RECTIFYING JUNCTIONS IN ALPHA-SILICON CARBIDE [J].

GRIFFITHS, LB .

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[9] GROWTH OF ALPHA-SIC SINGLE CRYSTALS FROM CHROMIUM SOLUTION [J].

GRIFFITHS, LB ;

MLAVSKY, AI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :805-810

[10] PREPARATION OF CRYSTALS OF PURE HEXAGONAL SIC [J].

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