CHEMICAL VAPOR-DEPOSITION OF METALS AND METAL SILICIDES ON THE INTERNAL SURFACES OF POROUS SILICON

Cobalt, cobalt monosilicide and rhenium thin films have been deposited on the internal walls of both n- and p-type porous silicon (PS) by metallo-organic chemical vapour deposition (MOCVD) at moderate temperatures and low pressure. Characterisation of the films by Rutherford Back-Scattering (RBS) showed penetration of Co, CoSi and Re into the pores to a depth of at least 2 mum, the concentration decreasing with increasing depth; NRA light element analysis revealed that substantial levels of oxygen and, to a lesser extent, carbon were present in the films.