CHEMICAL VAPOR-DEPOSITION OF METALS AND METAL SILICIDES ON THE INTERNAL SURFACES OF POROUS SILICON

被引：25

作者：

ANDERSON, DG

ANWAR, N

AYLETT, BJ

EARWAKER, LG

NASIR, MI

FARR, JPG

STIEBAHL, K

KEEN, JM

机构：

[1] QUEEN MARY & WESTFIELD COLL,DEPT CHEM,MILE END RD,LONDON E1 4NS,ENGLAND

[2] UNIV BIRMINGHAM,SCH PHYS & SPACE RES,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND

[3] UNIV BIRMINGHAM,DEPT MET & MAT,BIRMINGHAM B15 2TT,W MIDLANDS,ENGLAND

[4] DEF RES AGCY,DIV ELECTR,GREAT MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF ORGANOMETALLIC CHEMISTRY | 1992年 / 437卷 / 1-2期

关键词：

D O I：

10.1016/0022-328X(92)83450-V

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Cobalt, cobalt monosilicide and rhenium thin films have been deposited on the internal walls of both n- and p-type porous silicon (PS) by metallo-organic chemical vapour deposition (MOCVD) at moderate temperatures and low pressure. Characterisation of the films by Rutherford Back-Scattering (RBS) showed penetration of Co, CoSi and Re into the pores to a depth of at least 2 mum, the concentration decreasing with increasing depth; NRA light element analysis revealed that substantial levels of oxygen and, to a lesser extent, carbon were present in the films.

引用

页码：C7 / C12

页数：6

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