ELECTRONIC-STRUCTURE OF THE TRIANGULAR QUANTUM-WELL IN A TILTED MAGNETIC-FIELD

The quantized electron energies in the triangular well of a Si-MOSFET subjected to strong magnetic fields at tilt angles B = (B(x), 0, B(z)) are calculated. Approximate but analytic solutions are also provided with numerical solutions. It is shown that the role of the coupling Hamiltonian (approximately B(x) . B(z)) is crucial in obtaining the correct magnetization, although its contribution to the total energy is minor. This coupling term is responsible for the oscillation of the magnetizations with respect to the chemical potential or the two-dimensional electron density. The latter is also confirmed in the case of a parabolic quantum well.