ELECTRICAL CHARACTERISTICS AND THERMAL-STABILITY OF PLATINUM SILICIDE-TO-SILICON OHMIC CONTACTS METALIZED WITH TUNGSTEN

被引：24

作者：

SINHA, AK ^{[1
]}

机构：

[1] BELL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

关键词：

D O I：

10.1149/1.2403360

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1767 / 1771

页数：5

共 19 条

[1] ADY D, UNPUBLISHED WORK
[2] REFRACTORY METAL SILICON DEVICE TECHNOLOGY
BROWN, DM
ENGELER, WE
GARFINKEL, M
GRAY, PV
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1105 - +
[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS
CHANG, CY
FANG, YK
SZE, SM
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (07) : 541 - &
[4] Duffy M. T., 1970, RCA Review, V31, P742
[5] RESISTANCE OF INFINITE SLAB WITH DISK ELECTRODE
FOXHALL, GF
LEWIS, JA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (4P2): : 1609 - +
[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[7] BEAM-LEAD TECHNOLOGY
LEPSELTE.MP
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02): : 233 - &
[8] LEPSELTER MP, 1969, OHMIC CONTACTS SEMIC
[9] A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON
MAZUR, RG
DICKEY, DH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (03) : 255 - &
[10] PEARSON WB, 1965, HDB LATTICE SPACINGS, V2