RAPID THERMAL-DIFFUSION OF ZN INTO N-TYPE GAAS0.6P0.4 FROM ZN-DOPED OXIDE-FILMS

被引：14

作者：

USAMI, A

TOKUDA, Y

SHIRAKI, H

UEDA, H

WADA, T

KAN, H

MURAKAMI, T

机构：

[1] AICHI INST TECHNOL,DEPT ELECTR,TOYOTA 47003,JAPAN

[2] HAMAMATSU PHOTON KK,DIV SOLID STATE,HAMAMATSU 435,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 08期

关键词：

D O I：

10.1063/1.344064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3590 / 3594

页数：5

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[9] CHARACTERISTICS OF ELECTRON TRAPS IN SI-IMPLANTED AND RAPIDLY THERMAL-ANNEALED GAAS [J].

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