CHARACTERISTICS OF ELECTRON TRAPS IN SI-IMPLANTED AND RAPIDLY THERMAL-ANNEALED GAAS

被引：14

作者：

KITAGAWA, A ^{[1
]}

USAMI, A ^{[1
]}

WADA, T ^{[1
]}

TOKUDA, Y ^{[1
]}

机构：

[1] AICHI INST TECHNOL,DEPT ELECTR,TOYOTA 47003,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 02期

关键词：

D O I：

10.1063/1.340255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：414 / 420

页数：7

共 31 条

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