NATURE AND DISTRIBUTION OF ELECTRICALLY ACTIVE DEFECTS IN SI-IMPLANTED AND LAMP-ANNEALED GAAS

被引：11

作者：

DHAR, S

SEO, KS

BHATTACHARYA, PK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 58卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.335554

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4216 / 4220

页数：5

共 14 条

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