DISTRIBUTIONS OF RESIDUAL-STRESS, DISLOCATIONS, AND EL2 IN CZOCHRALSKI-GROWN SEMIINSULATING GAAS

[1] ABRAHAMS MS, 1965, J APPL PHYS, V36, P2285

[2] FACTORS AFFECTING THE SPATIAL-DISTRIBUTION OF THE PRINCIPAL MIDGAP DONOR IN SEMI-INSULATING GALLIUM-ARSENIDE WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 204 - 207

[3] Born M., 1975, PRINCIPLES OPTICS, VFifth

[4] Dalley J.W., 1978, EXPT STRESS ANAL

[5] GAAS FIELD-EFFECT TRANSISTOR PROPERTIES, AS INFLUENCED BY THE LOCAL CONCENTRATIONS OF MIDGAP NATIVE DONORS AND DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 602 - 604

[6] OPTICAL MAPPING OF RESIDUAL-STRESS IN CZOCHRALSKI GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1303 - 1305

[7] Dobrilla P., 1985, Defect Recognition and Image Processing in III-V Compounds. Proceedings of the International Symposium, P127

[8] EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 208 - 218

[9] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 668 - 670

[10] Elliott C. R., 1985, Defect Recognition and Image Processing in III-V Compounds. Proceedings of the International Symposium, P87

[1] ABRAHAMS MS, 1965, J APPL PHYS, V36, P2285

[2] FACTORS AFFECTING THE SPATIAL-DISTRIBUTION OF THE PRINCIPAL MIDGAP DONOR IN SEMI-INSULATING GALLIUM-ARSENIDE WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 204 - 207

[3] Born M., 1975, PRINCIPLES OPTICS, VFifth

[4] Dalley J.W., 1978, EXPT STRESS ANAL

[5] GAAS FIELD-EFFECT TRANSISTOR PROPERTIES, AS INFLUENCED BY THE LOCAL CONCENTRATIONS OF MIDGAP NATIVE DONORS AND DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 602 - 604

[6] OPTICAL MAPPING OF RESIDUAL-STRESS IN CZOCHRALSKI GROWN GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1303 - 1305

[7] Dobrilla P., 1985, Defect Recognition and Image Processing in III-V Compounds. Proceedings of the International Symposium, P127

[8] EXPERIMENTAL REQUIREMENTS FOR QUANTITATIVE MAPPING OF MIDGAP FLAW CONCENTRATION IN SEMI-INSULATING GAAS WAFERS BY MEASUREMENT OF NEAR-INFRARED TRANSMITTANCE [J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 208 - 218

[9] MECHANISM FOR DISLOCATION DENSITY REDUCTION IN GAAS CRYSTALS BY INDIUM ADDITION [J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 668 - 670

[10] Elliott C. R., 1985, Defect Recognition and Image Processing in III-V Compounds. Proceedings of the International Symposium, P87