GROWTH OF DIAMOND THIN-FILMS ON SILICON AND TEM OBSERVATION OF THE INTERFACE

被引:32
作者
KOBAYASHI, K [1 ]
KARASAWA, S [1 ]
WATANABE, T [1 ]
TOGASHI, F [1 ]
机构
[1] SCI UNIV TOKYO,SHINJUKU KU,TOKYO 162,JAPAN
关键词
D O I
10.1016/S0022-0248(08)80110-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Diamond thin films have been synthesized on silicon substrates by electron assisted chemical vapour deposition (EACVD). The influence of conditions of synthesis on the crystallinity of the films was examined by laser Raman spectroscopy. From these results, the optimum conditions for synthesis were determined. Transmission electron microscopy (TEM) was used to observe film/substrate interfaces of films which were synthesized under optimum conditions. An amorphous intermediate layer was observed between the silicon substrate and the diamond film. © 1990, Elsevier Science Publishers B.V.. All rights reserved.
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页码:1211 / 1214
页数:4
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