Optical study on ultrathin InAs/InP single quantum wells.

被引：15

作者：

Bitz, A

Jordan, C

Di Ventra, M

Mader, KA

Andreani, LC

Carlin, JF

Rudra, A

Staehli, JL

机构：

[1] ECOLE NORMALE SUPER LYON, CECAM, F-69364 LYON 07, FRANCE

[2] UNIV PAVIA, IST FIS A VOLTA, I-27100 PAVIA, ITALY

[3] ECOLE POLYTECH FED LAUSANNE, PHB ECUBLENS, INST MICRO & OPTOELECTR, CH-1015 LAUSANNE, SWITZERLAND

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1995年 / 17卷 / 11-12期

关键词：

D O I：

10.1007/BF02457211

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Our interest is centred on the very thin layers consisting of only one or a few monolayers of InAs. The optical transition energies, measured by photoluminescence spectroscopy, are compared with theoretical calculations obtained in envelope function approximation and through an empirical tight-binding method. This comparison yields values for the not well-known valence band offset at the InAs/InP interface, and the luminescence lines observed at different energies could be assigned to layers between one and 13 monolayers thick.

引用

页码：1367 / 1370

页数：4

共 13 条

[1] ACCURATE THEORY OF EXCITONS IN GAAS-GA1-XALXAS QUANTUM-WELLS [J].