NUMERICAL CML SWITCHING ANALYSES FOR HETEROJUNCTION GAAS/(GAAL)AS BIPOLAR-TRANSISTORS

The switching performance of GaAs/Fa//0//. //7Al//0//. //3As n-p-n heterojunction bipolar transistors (HBTs) has been investigated for current-mode-logic circuit operation using a hybrid device model composed of numerical one-dimensional transistor and diode models interconnected through resistances corresponding to the real device structure. Switching time is discussed in conjunction with parasitic effects, external circuit conditions and doping profiles. Ultra-high-speed switching of less than 10 ps has been shown to be attainable by scaling the device pattern dimensions down to 1 mu m order of magnitude.